微电子专业英语
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Reading Materials

Why do the deep levels act as effective centres of recombination?

Let us imagine an electron and hole wandering in the crystal. In order to meet,recombine and disappear,it is necessary that they should be close to each other in the vicinity of one and the same atom of the crystal lattice. 16. In order to meet,recombine and disappear,it is necessary that they should be close to each other in the vicinity of one and the same atom of the crystal lattice. 提示:meet、recombine、disappear是并列的关系,都是动词不定式,后两者的前面省略了to;it是先行主语,用法同上一个注释;one and the same atom强调必须是在同一原子附近出现。 Such a situation is,in general,possible but seldom occurs.

Let us now assume that there is an impurity centre in the crystal whose activation energy ΔE is great. Should an electron appear in the vicinity of this centre,it is sure to be trapped by the impurity centre. 17. Should an electron appear in the vicinity of this centre,it is sure to be trapped by the impurity centre. 提示:should前置,表示一种强调语气。

The centre will keep the electron trapped until a hole appears in the vicinity. As soon as that happens the electron and hole recombine. The“killer” has committed this task of annihilating the electron-hole pair,and is ready to start all over again. 18. The“killer” has committed this task of annihilating the electron-hole pair,and is ready to start all over again. 提示:原文作者为了更为生动地说明深能级杂质的作用,采用了拟人的手法,将深能级杂质视为一个“杀手”。在翻译成中文时,不妨灵活地处理。

Sometimes it is important for electrons and holes to perish in the device as soon as possible. It is often quite essential for the fast switching of semiconductor devices. Then impurities creating effective recombination centres should be incorporated into the material. Sometimes,on the contrary,electrons and holes must live long. In this case,the semiconductor is to be thoroughly purified.

Words and Expressions

constitute vt. 制定(法律),建立(政府),组成,任命

annihilate vt. 消灭

Glossary of Important Term

ambipolar transport 双极输运

excess carriers 过剩载流子

nonequilibrium excess charges 非平衡过剩载流子

generation 产生

recombination 复合

carrier injection 载流子注入

band-band recombination 带间复合(直接复合)

spontaneous recombination 自发复合

absorption 吸收

stimulated emission 受激发射

Auger recombination 俄歇复合

impact ionization 碰撞离化

band-impurity recombination 能带—杂质能级复合(SRH复合)

surface recombination 表面复合

majority carriers 多子,多数载流子

minority carriers 少子,少数载流子

minority carrier lifetime 少子寿命

Exercises

1. Translate the reading material into Chinese.

2. Answer the following questions in English.

(1)Describe the concept of excess generation and recombination.

(2)Why are the electron generation rate and recombination rate equal in the thermal equilibrium?

(3)Describe the concept of an excess carrier lifetime.